NDT452AP ,P-Channel Enhancement Mode Field Effect TransistorFeaturesPower SOT P-Channel enhancement mode power field-5A, -30V. R = 0.065Ω @ V = -10V ..
NDT452P ,P-Channel Enhancement Mode Field Effect Transistorapplications suchas notebook computer power management and DCmotor control._____D DD S SG G Absolut ..
NDT452P ,P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT453N ,N-Channel Enhancement Mode Field Effect Transistor
NDT453N ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT454P ,P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NJU7200L33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200L50 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U35 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U40 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7201L50 , C-MOS 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -5A, -30V. R = 0.065W @ V = -10V DS(ON) GS effect transistors are produced using Fairchild's proprietary, R = 0.1W @ V = -4.5V. DS(ON) GS high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design for extremely low R . DS(ON) and provide superior switching performance. These devices High power and current handling capability in a widely used are particularly suited for low voltage applications such as surface mount package. notebook computer power management and DC motor control. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDT452AP Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) -5 A D - Pulsed - 15 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W R qJC * Order option J23Z for cropped center drain lead. © 1997 NDT452AP Rev. B1
