NDT451N ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT451N ,N-Channel Enhancement Mode Field Effect Transistor
NDT452AP ,P-Channel Enhancement Mode Field Effect TransistorFeaturesPower SOT P-Channel enhancement mode power field-5A, -30V. R = 0.065Ω @ V = -10V ..
NDT452P ,P-Channel Enhancement Mode Field Effect Transistorapplications suchas notebook computer power management and DCmotor control._____D DD S SG G Absolut ..
NDT452P ,P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT453N ,N-Channel Enhancement Mode Field Effect Transistor
NJU7200L33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200L50 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U35 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U40 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7201L50 , C-MOS 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NDT451N
N-Channel Enhancement Mode Field Effect Transistor
September 1996
NDT451N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features ___________________________________________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter NDT451N UnitsDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 VD Drain Current - Continuous (Note 1a) ±5.5 A
- Pulsed ±25 Maximum Power Dissipation (Note 1a) 3 W
(Note 1b) 1.3
(Note 1c) 1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICSθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/WθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
Power SOT N-Channel enhancement mode power
field effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide
superior switching performance. These devices are
particularly suited for low voltage applications such
as DC motor control and DC/DC conversion where
fast switching, low in-line power loss, and resistance
to transients are needed.
5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V.
High density cell design for extremely low R DS(ON).
High power and current handling capability in a
widely used surface mount package. SGG
