NDT451AN ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT451N ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT451N ,N-Channel Enhancement Mode Field Effect Transistor
NDT452AP ,P-Channel Enhancement Mode Field Effect TransistorFeaturesPower SOT P-Channel enhancement mode power field-5A, -30V. R = 0.065Ω @ V = -10V ..
NDT452P ,P-Channel Enhancement Mode Field Effect Transistorapplications suchas notebook computer power management and DCmotor control._____D DD S SG G Absolut ..
NDT452P ,P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NJU7141F , LOW-VOLTAGE OPERATION TINY SINGLE C-MOS COMPARATOR
NJU7200L33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200L50 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U35 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200U40 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. R = 0.035W @ V = 10V DS(ON) GS effect transistors are produced using Fairchild's R = 0.05W @ V = 4.5V. DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize High density cell design for extremely low R . DS(ON) on-state resistance and provide superior switching High power and current handling capability in a widely used performance. These devices are particularly suited for low surface mount package. voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDT451AN Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) ± 7.2 A D - Pulsed ± 25 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W R qJC * Order option J23Z for cropped center drain lead. © 1997 NDT451AN Rev. D
