NDT2955 ,P-Channel Enhancement Mode Field Effect TransistorNDT2955 April 2002 NDT2955 P-Channel Enhancement Mode Field Effect Transistor
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NDT3055 ,N-Channel Enhancement Mode Field Effect Transistor
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NDT2955
P-Channel Enhancement Mode Field Effect Transistor
NDT2955 April 2002 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features This 60V P-Channel MOSFET is produced using • –2.5 A, –60 V. R = 300mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management R = 500mΩ @ V = –4.5 V DS(ON) GS plications. • High density cell design for extremely low R DS(ON) Applications • High power and current handling capability in a widely • DC/DC converter used surface mount package. • Power management D D D D S S D G G S S D SOT-223* G G SOT-223 (J23Z) o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage –60 V V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –2.5 A D – Pulsed –15 P W D Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 (Note 1c) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 12 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDT2955 NDT2955 13’’ 12mm 2500 units NDT2955 Rev. C 2002
