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NDT3055 ,N-Channel Enhancement Mode Field Effect Transistorapplications such as DC motor control andDC/DC conversion where fast switching, low in-lineTMTMSupe ..
NDT3055 ,N-Channel Enhancement Mode Field Effect Transistor
NDT3055L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT410EL ,N-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDT014L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 2.8 A, 60 V. R = 0.2 W @ V = 4.5 V DS(ON) GS effect transistors are produced using Fairchild's proprietary, R = 0.16 W @ V = 10 V. DS(ON) GS high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, High density cell design for extremely low R . DS(ON) provide superior switching performance, and withstand high energy pulses in the avalanche and commutation High power and current handling capability in a widely used modes.Thesedevices are particularly suited for low voltage surface mount package. applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. _________________________________________________________________________________ D D S D S G G Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDT014L Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage ± 20 V GSS Drain Current - Continuous (Note 1a) ± 2.8 A I D - Pulsed ± 10 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W R JC q © 1997 NDT014L Rev.D
