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NDT014
N-Channel Enhancement Mode Field Effect Transistor
September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. R = 0.2W @ V = 10V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low R . DS(ON) density, DMOS technology. This very high density process is High power and current handling capability in a widely used especially tailored to minimize on-state resistance and provide surface mount package. superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. _________________________________________________________________________________________________________ D D D S G G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDT014 Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) ±2.7 A D - Pulsed ±10 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 T ,T Operating and Storage Temperature Range -65 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W R qJC * Order option J23Z for cropped center drain lead. © 1997 NDT014 Rev. C1
