NDS9957 ,Dual N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS9957 ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures These N-Channel enhancement mode power field effect2.6A, 60V. R = 0.16Ω @ V = 10V. DS(ON ..
NDS9957 ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications suchDual MOSFET in surface mount package.as DC motor control and DC/DC conversion wher ..
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NDS9957
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1996 NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.6A, 60V. R = 0.16W @ V = 10V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low R . density, DMOS technology. This very high density process is DS(ON) especially tailored to minimize on-state resistance, provide High power and current handling capability in a widely used superior switching performance, and withstand high energy surface mount package. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such Dual MOSFET in surface mount package. as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. _______________________________________________________________________________ 4 5 3 6 7 2 1 8 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS9957 Units Drain-Source Voltage 60 V V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous (Note 1a) ± 2.6 A D - Pulsed ± 10 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R JC q © 1997 NDS9957.SAM
