NDS9952A_NL ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
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NDS9952A_NL
Dual N & P-Channel Enhancement Mode Field Effect Transistor
February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, R =0.08W @ V =10V. DS(ON) GS field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, R =0.13W @ V =-10V. DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process is especially tailored to High density cell design or extremely low R . DS(ON) minimize on-state resistance, provide superior switching High power and current handling capability in a widely used performance, and withstand high energy pulses in the surface mount package. avalanche and commutation modes. These devices are particularly suited for low voltage applications such as Dual (N & P-Channel) MOSFET in surface mount package. notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units V Drain-Source Voltage 30 -30 V DSS V Gate-Source Voltage ± 20 ± 20 V GSS I Drain Current - Continuous (Note 1a) ± 3.7 ± 2.9 A D - Pulsed ± 15 ± 10 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R JC q © 1997 NDS9952A.SAM
