NDS9948 ,Dual 60V P-Channel PowerTrench MOSFETNDS9948 May 2002 NDS9948 Dual 60V P-Channel PowerTrench MOSFET
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NDS9948
Dual 60V P-Channel PowerTrench MOSFET
NDS9948 May 2002 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –2.3 A, –60 V R = 250 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 500 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Low gate charge (9nC typical) ratings (4.5V – 20V). • Fast switching speed Applications • Power management • High performance trench technology for extremely • Load switch low R DS(ON) • Battery protection • High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS V Gate-Source Voltage ±20 V GSS ID Drain Current – Continuous (Note 1a) –2.3 A – Pulsed –10 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA (Note 1c) 135 °C/W R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9948 NDS9948 13’’ 12mm 2500 units NDS9948 Rev B(W) 2002
