NDS9947 ,Dual 20V P-Channel PowerTrench MOSFETNDS9947 May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET
NDS9948 ,Dual 60V P-Channel PowerTrench MOSFETNDS9948 May 2002 NDS9948 Dual 60V P-Channel PowerTrench MOSFET
NDS9952A ,Dual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description
NDS9952A_NL ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
NDS9953A ,Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description
NDS9955 ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures N-Channel enhancement mode power field effect Ω)GStransistors are produced using Fairchil ..
NJU7022D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7022D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7024 , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7024D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7024D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NJU7024D , LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER
NDS9947
Dual 20V P-Channel PowerTrench MOSFET
NDS9947 May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –3.5 A, –20 V R = 100 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 190 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Low gate charge ratings (–4.5V to – 20V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –20 V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) –3.5 A D – Pulsed –15 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA (Note 1c) 135 R Thermal Resistance, Junction-to-Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9947 NDS9947 13’’ 12mm 2500 units NDS9947 Rev B(W) 2002
