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NDS9936
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5A, 30V. R = 0.05W @ V = 10V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low R . DS(ON) especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are particularly surface mount package. suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits Dual MOSFET in surface mount package. where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 4 5 3 6 7 2 1 8 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS9936 Units Drain-Source Voltage 30 V V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous @ T = 25°C (Note 1a) ± 5.0 A D A - Continuous @ T = 70°C (Note 1a) ± 4.0 A - Pulsed @ T = 25°C ± 40 A Power Dissipation for Dual Operation 2 W P D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R qJC © 1997 NDS9936.SAM
