NDS9435A ,30V P-Channel PowerTrench MOSFETNDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET
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NDS9925A ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computerused surface mount package.power management and other batter ..
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NDS9435A
30V P-Channel PowerTrench MOSFET
NDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –5.3 A, –30 V R = 50 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 80 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive • Low gate charge voltage ratings (4.5V – 25V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 I Drain Current – Continuous (Note 1a) –5.3 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9435A NDS9435A 13’’ 12mm 2500 units NDS9435A Rev E(W) 2002
