NDS9430 ,30V P-Channel PowerTrench MOSFETNDS9430 May 2002 NDS9430 30V P-Channel PowerTrench MOSFET
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorDecember 1997 NDS9430ASingle P-Channel Enhancement Mode Field Effect Transistor
NDS9430A ,Single P-Channel Enhancement Mode Field Effect Transistorapplications suchas notebook computer power management and other batterypowered circuits where fas ..
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS9430A ,Single P-Channel Enhancement Mode Field Effect TransistorFeaturesThese P-Channel enhancement mode power field effect -5.3A, -20V. R = 0.05Ω @ V = -10V ..
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NDS9430
30V P-Channel PowerTrench MOSFET
NDS9430 May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –5.3 A, –30 V R = 60 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R =100 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gate drive voltage • Low gate charge ratings (4.5V – 20V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –5.3 A D – Pulsed –20 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9430 NDS9430 13’’ 12mm 2500 units NDS9430 Rev B 2002
