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NDS9410S
Single N-Channel Enhancement Mode Field Effect Transistor
February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 7.0 A, 30 V. R = 0.03 W @ V = 10 V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low R . DS(ON) density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used surface mount package. superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ____________________________________________________________________________________________ 5 4 6 3 2 7 8 1 ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted A Symbol Parameter NDS9410S Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) 7 A D - Pulsed 25 Maximum Power Dissipation (Note 1a) 2.5 W P D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R JC q © 1997 NDS9410S Rev.B
