NDS9410 ,Single N-Channel Enhancement Mode Field Effect TransistorNDS9410AApril 2000NDS9410ASingle N-Channel Enhancement Mode Field Effect Transistor
NDS9410A ,Single N-Channel Enhancement Mode Field Effect TransistorNDS9410AApril 2000NDS9410ASingle N-Channel Enhancement Mode Field Effect Transistor
NDS9410A_NL ,Single N-Channel Enhancement Mode Field Effect TransistorFeaturesThis N-Channel Logic Level MOSFET is produced• 7.3 A, 30 V. R = 28 mΩ @ V = 10 VDS(ON) GSu ..
NDS9410A_NL. ,Single N-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer power• High power and current handling capability in amanage ..
NDS9410S ,Single N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
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NDS9410
Single N-Channel Enhancement Mode Field Effect Transistor
NDS9410A i NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features s N-Channel Logic Level T SFEOMs icde • . V, 303 ARm = 28 Ω V = 10(OGS irchild Smicctse advanc R(Om = 42 ΩGSV. = 4 Poweh proc ttha has been escily tilao t ommiithe on-ste ressceit and yet tiimnnaa • myteroc tem threroc.meroiitcr shows Rwlo(O e devices are partclaiuy situfor lwo volt s icniocsuh as notk tcumpo • in alitiu tmmen and other battery powcsi tw .ckt pamciauw f aswitchi lwo iinne pow slosie to stir D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T5C unliess othesede notrwA Symbol Parameter Ratings Units Vte VloVS Vtloee±VSGS Ii(Note 1a)3AD s– Plu nio SeiisreosiPwo(Note 1a)5PWD (Note 1b)2 (Note 1c)0 TmJitioJG°C Thermal Characteristics imboiJ, ela(Note 1a)RJA°Wθ ReoiJ, ela(Note 1) °WθJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity ’mts Wv) B Re(airchemictorion 2000 Fd Silonduc Corporat NDS9410A 2500 uni12m13’NDS9410ANDS9410A C/25Therm Resiancstuncton-t-Cas C/ 50Therm Resiancstuncton-t-Aent ST -55 t +150Operatng and Sorage uncton Teperature Range, T 1. 1. 2.paton fr Dingl Operat 20ed 7.– ContnuousDrain Current 20Gatourc-S Vage DS 30Drain-Sourcage =2 entans are needed. resancstand er -lng,st delrfed sy usoune age hereuircered anage High power and crrent handlapabing cy powerer ebooapplat ageed rlThes DSN) upering perfan High perfancenchnology fr exel anatze ni redpealessrTrenc 5 @ VDSN) edonduor’Faing us DSN) @ V7. produThi 000l 2Apr
