NDS8936 ,Dual N-Channel Enhancement Mode Field Effect TransistorJuly 1996 N NDS8936Dual N-Channel Enhancement M ode Field Effect Transistor
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NDS8936
Dual N-Channel Enhancement Mode Field Effect Transistor
July 1996
NDS8936
Dual N-Channel Enhancement M ode Field Effect Transistor
General Description Features ________________________________________________________________________________
Absolute M aximum Ratings TA= 25°C unless otherwise noted
Symbol Parameter NDS8936 UnitsDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 VD Drain Current - C ontinuous (Note 1a) ± 5.3 A
- Pulsed ± 20 Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9J,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICSθJA Thermal R esistance, Junction-to-Ambient (Note 1a) 78 °C/WθJC Thermal R esistance, Junction-to-Case (Note 1) 40 °C/W
5.3A, 30V. R DS(ON) = 0.035Ω @ VGS = 10V
R DS(ON) = 0.05Ω @ VGS = 4.5V
High density cell design for extremely low R DS(ON).
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
These N-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide
superior switching performance. These devices are
particularly suited for low voltage applications such
as notebook computer power management and
other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients
are needed.
