NDS8858H ,Complementary MOSFET Half BridgeElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
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NDS8858H
Complementary MOSFET Half Bridge
July 1996 NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are N-Channel 6.3A, 30V, R =0.035W @ V =10V. DS(ON) GS produced using Fairchild's proprietary, high cell density, P-Channel -4.8A, -30V, R =0.065W @ V =-10V. DS(ON) GS DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide High density cell design or extremely low R . DS(ON) superior switching performance, and withstand high energy High power and current handling capability in a widely used pulses in the avalanche and commutation modes. These surface mount package. devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are Matched pair for equal input capacitance and power capability connected together. . ________________________________________________________________________________ V+ Vout P-Gate Vout Vout N -Gate Vout V- Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units Drain-Source Voltage 30 -30 V V DSS Gate-Source Voltage 20 -20 V V GSS I Drain Current - Continuous (Note 1a &2) 6.3 -4.8 A D - Pulsed 20 20 P Maximum Power Dissipation (Note 1a) 2.5 W D (Single Device) (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient 50 °C/W R JA q (Single Device) (Note 1a) Thermal Resistance, Junction-to-Case 25 °C/W R JC q (Single Device) (Note 1a) © 1997 NDS8858H Rev. C
