NDS8426A ,Single N-Channel Enhancement Mode Field Effect TransistorJanuary 1998 NDS8426ASingle N-Channel Enhancement Mode Field Effect Transistor
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NDS8426A
Single N-Channel Enhancement Mode Field Effect Transistor
January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features 10.5 A, 20 V. R = 0.0135 W @ V = 4.5 V. SO-8 N-Channel enhancement mode power field effect DS(ON) GS R = 0.016 W @ V = 2.7 V. transistors are produced using Fairchild's proprietary, high DS(ON) GS cell density, DMOS technology. This very high density High density cell design for extremely low R . DS(ON) process is especially tailored to minimize on-state High power and current handling capability in a widely used resistance and provide superior switching performance. surface mount package. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ___________________________________________________________________________________________ 5 4 6 3 2 7 8 1 ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted A Symbol Parameter NDS8426A Units Drain-Source Voltage 20 V V DSS V Gate-Source Voltage ±8 V GSS I Drain Current - Continuous (Note 1a) 10.5 A D - Pulsed 30 P Maximum Power Dissipation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W qJC © 1998 NDS8426A Rev.B1
