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NDS8425
Single N-Channel, 2.5V Specified PowerTrench MOSFET
NDS8425 January 2001 NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced • 7.4 A, 20 V. R = 0.022 Ω @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced Power R = 0.028 Ω @ V = 2.7 V DS(ON) GS Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate • Fast switching speed charge for superior switching performance. These devices have been designed to offer exceptional • Low gate charge (11nC typical) power dissipation in a very small footprint package. • High performance trench technology for extremely low Applications R DS(ON) • DC/DC converter • High power and current handling capability in a widely • Load switch used surface mount package D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) A D ±7.4 – Pulsed ±20 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS8425 NDS8425 13’’ 12mm 2500 units NDS8425 Rev D (W) 2001 Fairchild Semiconductor International
