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NDS8410A
Single N-Channel Enhancement Mode Field Effect Transistor
March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features 10.8 A, 30 V. R = 0.012 W @ V = 10 V SO-8 N-Channel enhancement mode power field effect DS(ON) GS R = 0.017 W @ V = 4.5 V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low R . DS(ON) especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are particularly surface mount package. suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ____________________________________________________________________________________________ 5 4 6 3 2 7 8 1 ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted A Symbol Parameter NDS8410A Units V Drain-Source Voltage 30 V DSS Gate-Source Voltage ±20 V V GSS Drain Current - Continuous (Note 1a) 10.8 A I D - Pulsed 50 P Maximum Power Dissipation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W JC q © 1997 NDS8410A Rev.C1
