NDS352P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorMarch 1996NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS355 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS355AN ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesTMSuperSOT -3 N-Channel logic level enhancement mode1.7A, 30 V, R = 0.125 Ω @ V = 4.5 V ..
NDS355AN_NL ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable phones, PCMCIA thermal and electrical capabilities.car ..
NDS355AN_NL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS355N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power field 1.6A, 30V. R = 0.125Ω @ V = 4.5 ..
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NDS352P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -0.85A, -20V. R = 0.5W @ V = -4.5V. DS(ON) GS field effect transistors are produced using Fairchild's Proprietary package design using copper lead frame for proprietary, high cell density, DMOS technology. This superior thermal and electrical capabilities. very high density process is especially tailored to minimize on-state resistance. These devices are High density cell design for extremely low R . DS(ON) particularly suited for low voltage applications such as notebook computer power management, portable Exceptional on-resistance and maximum DC current electronics, and other battery powered circuits where fast capability. high-side switching, and low in-line power loss are Compact industry standard SOT-23 surface mount needed in a very small outline surface mount package. package. ____________________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS352P Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage - Continuous ±12 V GSS I Maximum Drain Current - Continuous (Note 1a) ±0.85 A D - Pulsed ±10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient 250 °C/W R JA q (Note 1a) Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W R JC q © 1997 NDS352P Rev. F1
