NDS351AN_NL ,N-Channel, Logic Level, PowerTrench MOSFETapplications in notebook computers, portable phones,• Industry standard outline SOT-23 surface moun ..
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NDS351AN_NL
N-Channel, Logic Level, PowerTrench MOSFET
NDS351AN June 2003 NDS351AN Ò N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 1.4 A, 30 V. R = 160 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 250 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. · Ultra-Low gate charge These devices are particularly suited for low voltage applications in notebook computers, portable phones, · Industry standard outline SOT-23 surface mount PCMCIA cards, and other battery powered circuits TM package using proprietary SuperSOT -3 design for where fast switching, and low in-line power loss are superior thermal and electrical capabilities needed in a very small outline surface mount package. · High performance trench technology for extremely low RDS(ON) D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 1.4 A D – Pulsed 10 Power Dissipation for Single Operation (Note 1a) 0.5 P W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 RqJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 75 qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 351A NDS351AN 7’’ 8mm 3000 units Ó2003 NDS351AN Rev E(W)
