NDS335N_NL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
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NDS352AP ,P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
NDS352AP_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS352AP_NL ,P-Channel Logic Level Enhancement Mode Field Effect Transistorapplicationsusing proprietary SuperSOT -3 design for superior thermalsuch as notebook computer pow ..
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NDS335N_NL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -Channel logic level enhancement mode power field 1.7 A, 20 V. R = 0.14 W @ V = 2.7 V DS(ON) GS effect transistors are produced using Fairchild's proprietary, R = 0.11 W @ V = 4.5 V. DS(ON) GS high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. Industry standard outline SOT-23 surface mount package TM These devices are particularly suited for low voltage using poprietary SuperSOT -3 design for superior thermal applications in notebook computers, portable phones, PCMCIA and electrical capabilities. cards, and other battery powered circuits where fast switching, High density cell design for extremely low R . and low in-line power loss are needed in a very small outline DS(ON) surface mount package. Exceptional on-resistance and maximum DC current capability. ________________________________________________________________________________ D S G Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS335N Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage - Continuous 8 V GSS I Maximum Drain Current - Continuous (Note 1a) 1.7 A D - Pulsed 10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 Operating and Storage Temperature Range -55 to 150 °C T ,T J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient 250 °C/W R JA q (Note 1a) Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W R qJC © 1997 NDS335 Rev.C
