NDS0610_NL ,P-Channel Enhancement Mode Field Effect TransistorGeneral Description These P-Channel enhancement mode field effect • −0.12A, −60V. R = 10 ..
NDS0610_NL ,P-Channel Enhancement Mode Field Effect Transistorapplications requiring a low current high side switch. DDSG S GSOT-23 oAbsolute Maximum Ratings ..
NDS331 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS332 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS335 ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable phones, PCMCIAand electrical capabilities.cards, and o ..
NDS335 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NJU4051B , SINGLE 8-CHANNEL MULTIPLEXER
NJU4051BM , SINGLE 8-CHANNEL MULTIPLEXER
NJU4052B , DUAL 4-CHANNEL MULTIPLEXER
NJU4052B , DUAL 4-CHANNEL MULTIPLEXER
NJU4052BD , DUAL 4-CHANNEL MULTIPLEXER
NJU4052BD , DUAL 4-CHANNEL MULTIPLEXER
NDS0610_NL
P-Channel Enhancement Mode Field Effect Transistor
NDS0610 July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect • −0.12A, −60V. R = 10 Ω @ V = −10 V DS(ON) GS transistors are produced using Fairchild’s proprietary, R = 20 Ω @ V = −4.5 V high cell density, DMOS technology. This very high DS(ON) GS density process has been designed to minimize on- • Voltage controlled p-channel small signal switch state resistance, provide rugged and reliable performance and fast switching. They can be used, with • High density cell design for low R DS(ON) a minimum of effort, in most applications requiring up to • High saturation current 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. D D S G S G SOT-23 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage −60 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1) A D −0.12 – Pulsed −1 P Maximum Power Dissipation (Note 1) 0.36 W D 2.9 mW/°C Derate Above 25°C T , T Operating and Storage Junction Temperature Range J STG −55 to +150 °C Maximum Lead Temperature for Soldering T 300 °C L Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) 350 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 610 NDS0610 7’’ 8mm 3000 units NDS0610 Rev B(W) 2002
