NDP7060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP7060 ,N-Channel Enhancement Mode Field Effect Transistorapplications. ________________________________________________________________________________DGS A ..
NDP7060 ,N-Channel Enhancement Mode Field Effect TransistorFeaturesThese N-Channel enhancement mode power field effect75A, 60V. R = 0.013Ω @ V =10V. DS(ON) GS ..
NDS03ZE-M6 ,One - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
NDS0605 ,P-Channel Enhancement Mode Field Effect TransistorGeneral Description These P-Channel enhancement mode field effect • −0.18A, −60V. R = 5 ..
NDS0610 ,P-Channel Enhancement Mode Field Effect TransistorFeaturesThese P-Channel enhancement mode power field -0.18 and -0.12A, -60V. R = 10ΩDS(ON)effect tr ..
NJU3718G , 20-BIT SERIAL TO PARALLEL CONVERTER
NJU39610 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NJU39612E2 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NJU4051B , SINGLE 8-CHANNEL MULTIPLEXER
NJU4051BM , SINGLE 8-CHANNEL MULTIPLEXER
NJU4052B , DUAL 4-CHANNEL MULTIPLEXER
NDP7060
N-Channel Enhancement Mode Field Effect Transistor
May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 75A, 60V. R = 0.013W @ V =10V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process is temperature. especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such 175°C maximum junction temperature rating. as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line High density cell design for extremely low R . DS(ON) power loss, and resistance to transients are needed. 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP7060 NDB7060 Units V Drain-Source Voltage 60 V DSS V 60 V DGR Drain-Gate Voltage (R < 1 MW) GS V Gate-Source Voltage - Continuous ± 20 V GSS - Nonrepetitive (t < 50 µs) ± 40 P I Drain Current - Continuous 75 A D - Pulsed 225 P Maximum Power Dissipation @ T = 25°C 150 W D C Derate above 25°C 1 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds © 1997 NDP7060.SAM
