NDP610B ,N-Channel Enhancement Mode Field Effect Transistorapplications.power loss, and resistance to transients are needed.__________________________________ ..
NDP7050 ,N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionEnhancement Mode Field Effect Transistor / NDB7050NDP7050 (TCW VDI AV µ A VI V V ..
NDP7051 , N-Channel Enhancement Mode Field Effect Transistor [Obsolete]
NDP7051L ,N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP7051L ,N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP7060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NJU3715G , 16-BIT SERIAL TO PARALLEL CONVERTER
NJU3718G , 20-BIT SERIAL TO PARALLEL CONVERTER
NJU39610 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NJU39612E2 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NJU4051B , SINGLE 8-CHANNEL MULTIPLEXER
NJU4051BM , SINGLE 8-CHANNEL MULTIPLEXER
NDP610A-NDP610B
N-Channel Enhancement Mode Field Effect Transistor
May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 26 and 24A, 100V. R = 0.065 and 0.080W. DS(ON) effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell density, DMOS technology. This elevated temperature. very high density process has been especially Rugged internal source-drain diode can eliminate tailored to minimize on-state resistance, provide the need for an external Zener diode transient superior switching performance, and withstand high suppressor. energy pulses in the avalanche and commutation 175°C maximum junction temperature rating. modes. These devices are particularly suited for low High density cell design (3 million/in²) for extremely voltage applications such as automotive, DC/DC low R . converters, PWM motor controls, and other battery DS(ON) 2 powered circuits where fast switching, low in-line TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. power loss, and resistance to transients are needed. _____________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C NDP610A NDP610AE NDP610B NDP610BE Symbol Parameter NDB610A NDB610AE NDB610B NDB610BE Units V Drain-Source Voltage 100 V DSS V Drain-Gate Voltage (R < 1 MW) 100 V DGR GS V Gate-Source Voltage - Continuous ±20 V GSS ±40 V - Nonrepetitive (t < 50 ms) P I Drain Current - Continuous 26 24 A D - Pulsed 104 96 A P 100 W Total Power Dissipation @ T = 25°C D C Derate above 25°C 0.67 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering 275 °C L purposes, 1/8" from case for 5 seconds © 1997 NDP610.SAM
