NDP6060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP6060. ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP6060L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese logic level N-Channel enhancement mode power 48A, 60V. R = 0.025Ω @ V = 5V. DS(ON) GS ..
NDP6060L. ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures48A, 60V. R = 0.025Ω @ V = 5V. These logic level N-Channel enhancement mode DS(ON) GSpower ..
NDP606A ,N-Channel Enhancement Mode Power Fleid Effect Transistorapplications such as automotive and other battery powered
circuits where fast switching, low in-Ii ..
NDP606B ,N-Channel Enhancement Mode Power Fleid Effect TransistorGeneral Description
These n-channel enhancement mode power field effect
transistors are produce ..
NJU3715G , 16-BIT SERIAL TO PARALLEL CONVERTER
NJU3718G , 20-BIT SERIAL TO PARALLEL CONVERTER
NJU39610 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NJU39612E2 , MICROSTEPPING MOTOR CONTROLLER WITH DUAL DAC
NJU4051B , SINGLE 8-CHANNEL MULTIPLEXER
NJU4051BM , SINGLE 8-CHANNEL MULTIPLEXER
NDP6060
N-Channel Enhancement Mode Field Effect Transistor
March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. R = 0.025W @ V =10V. These N-Channel enhancement mode power field effect DS(ON) GS transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. process has been especially tailored to minimize on-state resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor. commutation modes. These devices are particularly suited 175°C maximum junction temperature rating. for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery High density cell design for extremely low R . DS(ON) powered circuits where fast switching, low in-line power 2 loss, and resistance to transients are needed. TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP6060 NDB6060 Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1 MW) DGR GS V Gate-Source Voltage - Continuous ± 20 V GSS - Nonrepetitive (t < 50 µs) ± 40 P o I Drain Current - Continuous T =25 C 48 A D c o - Continuous T =100 C 32 C - Pulsed 144 P Total Power Dissipation @ T = 25°C 100 W D C Derate above 25°C 0.67 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds © 1997 NDP6060 Rev. B1 / NDB6060 Rev. C
