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NDP605B-NDP606A-NDP606B
N-Channel Enhancement Mode Power Fleid Effect Transistor
General Description
These n-channel enhancement mode power field effect
transistors are produced using Natkmal's proprietary, high
cell density, DMOS technology. This very high density pro-
cess has been especially tailored to minimize on-state re-
sistance, provide superior switching performance, and with-
stand high energy pulses In the avalanche and commutation
modes. These devices are particularly suited for low voltage
applications such as automotive and other battery powered
circuits where (est switching, low in-Iine power loss, and re-
sistance to transients are needed.
NNational Semiconductor
NDP605A/NDP605B, NDP606A/NDP606B
N-Channel Enhancement Mode
Power Field Effect Transistor
March 1993
Features
I 48 and 42 Amp, 50V and 60V, RDS(on) = 0.025n and
0.028n
ll Critical DC electrical parameters specified at elevated
temperature
I Rugged internal source-drain diode eliminates the need
tar external Zener Diode Transient Suppressor
ll 175''C maximum junction temperature rating
I Easily paralleled for higher current applications
II High density cell design (3 million/ina) for extremely low
Rioston)
II Lower Roam) temperature coefficient
O s TUGM1TT2-2
TLytaM1112-',
TO-220AB
Absolute Maximum Ratings
Symbol Parameter NDP606A NDPGOSA NDPEOGB NDPGOSB Units
V955 Drain-Source Voltage 60 50 60 50 V
VDGR Drain-Gate Voltage (Has a 1 Mn) 60 50 60 50 V
Vass Gate-Source Vottago--Gontinuous * 20 V
-thm Repetitive (ti, < 50 ws) k 40
ID Drain Current-Continuous 48 42 A
-Pulsed 144 126
PD Total Power Dissipation © To = 25°C 100 w
Derate Above 296 0.67 WPC
TJ, TSTS Operating and Storage -65 to 175 °c
Temperature Range
TL Maximum Lead Temperature tor Soldering .
Purposes. V." from Case for 5 sec.
©1995Nahll thmietmasettrthrParatkm TllG/HII2 I
RRD-i33matt5/FMrV U. SA.
Cl 550111-30 DUB‘IEBH 332 D
8909dClN/V909dCIN ‘8909dCIN/V909dCIN
Joxsgsueu 199“; megs JaMOd apow luawaoueuua |auueu3-N
Electrical Characteristics To = 25°C unless otherwise noted
D ESDLLBD 0039535 i?7n Cl
Symbol I Parameter I Teat Conditions L Type I Mln I Typ I Max I Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage vas "'-" ov, ID - 250 “A NDP605A 50 V
NDP605B
NDPSOSA
NDPBOBB 60 V
ksss Zero Gate Voltage Drain Current VDs = Rated Voltage,
VGS = W. TJ = 25''C All 250 PA
VDS -- Rated Voltage,
veg ' ov, TJ == 125''C All 1.0 mA
less; Gate-Body Leakage, Forward Vas = 20V All 100 nA
Isssa Gate-Body Leakage, Reverse Vas = --20V All - 100 nA
ON CHARACTERISTICS
Vegan) Gate Threshold Voltage Vos = Vas TJ = 25'C 2.0 4.0 V
I - 250 A All
D - P TJ = 125-0 1.4 3.6 v
RDS(on) Static Drain-Source Tu = 25'C ID -- 24A NDP605A
On-Resistance vas = 10V NDPEOGA 0.020 0.025 n
b = 21A NDPSOSB
NDP606B 0.028 n
TJ ' 125°C ID --- 24A NDP605A
Vas = 10V NDP606A 0.030 0.038 n
ID --- 21A NDPGOSB
NDPGOGB 0.048 n
ng Forward Transconductance vss = 10V, ID _ 0.5 Rated b All 10 18 mhos
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance vas --- 0V, Vos ' 25V All 1375 1800 pF
Crss Reverse Transfer Capacitance f = 1 MHz All 300 400 pF
Coss Output Capacitance All 620 800 pF
SWITCHING CHARACTERISTICS
town) Tum-On Delay Time V00 =25V, ID - 0.5 Rated b, All 16 30 ns
k Rise Time “GEN --- 7-59 All 80 120 ns
Vas = 10V
tDiuit) Tum-Off Delay Time All 30 60 ns
I, Fall Time All 55 100 ns
th Total Gate Charge VDS --- 0.8 Rated Voss, All "
Qgs Gate-Source Charge '0 = Rated ks All 6 "
vas -- 10V
09d Gate-Drain Charge All 32 n0
Electrical Characteristics Tc - 25''G unless otherwise noted (Continued)
Symbol I Parameter I Test Conditions I Type I Min I Typ I Max I Units
SOURCE-DRAIN DIODE CHARACTERISTICS
Is Maximum Continuous Source NDP605A 48 A
Current NDP606A
33323 42 A
ISM Maximum Pulsed Source NDP605A 144 A
Current NDPGOGA
'dl,',',ttf, 126 A
VSD Diode Forward Voltage ts = 0.5 Rated ls To = 25''C All 1.3 V
Vas = OV Tu = 125''C All 1.2 v
tn Reverse Recovery Ttme Vas = 0V, ls ' 0.5 Rated Is All 85 ns
l" Reverse Recovery Current dls/dt = 100 Alps All 4.8 A
THERMAL CHARACTERISTICS
Rm Thermal Resistance, Junction to Case 1.50 “CIW
Roua Thermal Rasistarsa, Junction to Ambient 62.5 'C/W
vss = toy 9v av
'0' DRAIN CURRENT (A)
Typical Electrical Characteristics
g 0.2 0.4 0.6 0.8 1 1,2 L4 1.6 " 2
has, DRNN-50URCE VOLTAGE (v)
TUG/11112-3
FIGURE I. On-Region Characteristics
GATE THRESHOLD VOLTAGE (NORMALIZEO)
-50 -25 o 25 so " 1001251511175
L, JuucnoN Izupsnnun: (°c)
TLN/1112-4
FIGURE 2. Gate Threshold Variation
with Temperature
D 550111130 UDBHEBI: 1105 ICC?
11951011) (ma) 10. mm comm (A)
CAPACITANCE (p7)
Typical Electrical Characteristics (Continued)
50 1 I
hs = 10V I, = -ssvc
40 ' Got:
30 15m
-e.,sf/'
2 3 4 5 s
har GATE-SOURCE vomcc (r)
Ts " 100°C
T: = 25°C
T: = -55°c
Viss = toy
0 20 40 60
b, DRAIN CURRENI (A)
FIGURE 5. On-Resistance versus
Drain Current
men 1 1 12-5
FIGURE 3. Transfer Characteristics
TL/Gl1‘112-7
0 10 20 30 40 50
vos, DRAlN-SOURCE VOLTAGE (v)
FIGURE T. Capacitance versus
Draln-Source Voltage
TUG/11I12-9
3 1.15
' Ll /
L-, 1.05 ,1
E 0.95
, b = 250y
g 0.9 I I 1
g -50 -25 o 25 50 75100125150175
V JUNCTION TEMPERATURE (oc)
TL/G/tttlk-l,
FIGURE 4. Breakdown Voltage Variation
with Temperature
0.8 b = 24A
Vcs = 10v
-50 -25 0 25 50 75 100125150175
To, JUNCTiON TEMPERATURE (oc)
TL/G/tl 1 12-8
FIGURE 6. On-Reslstance Variation
with Temperature
s;iji''"
ss")'''
v55. GAIE-SOURCE VOLTAGE (v)
0 20 40 60 80
GATE CHARGE (nc)
TL/GM 1112-‘0
FIGURE tr. Gate Charge versus
Gate-Souree Voltage
D ESULLBU UUB‘IbEI? MI CI
Typical Electrical Characteristics (Continued)
300 LN"
ti' so
j: hs = zov
0.3 SINGLE PUISE
Tc=2s°c
123 s no 203050100
V05, DRAIN-SOURCE VOLTAGE (V)
FIGURE 9. Maximum Rated Forward Biased
Safe Operating Area
g 5 th5
E E 0.3
lt, a: " 0 ,
S -u D D P
'e = o 1 . M)
3 'g' 0.0 tTL"
1 ._ 0.05 " (tcl
2 a ta
_ - 0.03
c 2 0.0 nun even. ll . IM,
= g tho?
F- SINGLE PULSE
0.01 0,02 th05 tht th2 os 1 2 5 10 20
mm: (m)
FIGURE 10. Thermal Response
TL/G/11112-11
M“) = rit) Aug
nun) ' LS''C/.
0 CURVES APPLY ion PON"
PULH "tuh SWIN
READ “If " h
Hum) - 'r . 'eMucel
50 100 200 500 1000
TL/G/‘1112-12
--G-- - lo -
1ston) ' ' V(n") -- ,
go; 90%
Your ouwur. vou,
(mvzmu)
man 105 ti
INPUT, v".
TL/G/11112-1a PULSE WIDTH
FIGURE 11. Swhtrhing Test Circuit TL/G/ll;
FIGURE 12. Switching Waveforms
D ESULLBU UUBHEBB T53 D
NDP605A/NDP6053, NDP606A/NDP6068
N-Channel Enhancement Mode Power Field Effect Transistor
Package Information
[16540.67] -/- [3.53-4.Ml
o.1oo-o.135
[2.54-3.43]
I 'dv'
BO.139-0.161 --
tl.580-0.650
[14.22- 16.51]
- SEATING PLANE
_ 0.!40-0J90
[3.55-4.92]
- tht)2t)-tr.055
-l [o.5!-1.40]
0.230-0.270 - -
[5.e4-s.as)
a.5no-n.sao
|I2.7o-u.7s]
0.014-o.ozz
[0.35-0.55] _'l
th080-tht "
[2.03-2.92]
IADJD (REV A)
TO-220
PIN '1 lD-/ 0.250
I l Fsy'y m7
th045-0.07tt -
[LH-IJB]
m , ' ,
_.l V t).015-0,040
[0.38-1.02]
o.cso-o.uo - ml
l2.2g-2.7'l
__ _ ono-umo
[4.33-5.33]
Source
LIFE SUPPORT POLICY
NATIONALS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
.A critical component is any component of a life
support device or system whose failure to perform can
he reasonably expected to cause the failure of the life
support device or system, or to affect Its safety or
effectiveness.
tlatlortal Semiconductor
Corporation
1141 Wast Barttin Road
Mammal Semi conductor
Europe
Fax (+49) tM8th530 85 86
National Semiconmctor
Hong Kong Ltd.
13m Floor, Strttight Block.
Nation: serttiettrtduetor
Japan Ltth
Td: M.0434t9iN2309
Arlington, TX 76017
Ta: 1mm) 272-9959
Fax: 1(300) 737.7015
Emalt crfiwir"1wrn2msrurom
Demsm Ttar. (+49) 0-1 80530 85 85
Engllm Tttt (+49) 0-1 80-532 78 32
Franqals Tat (+49) tr-l 30-532 93 56
llallano Tat (+49) 0430634 16 80
Ocean Centre. 5 Canton Re
Ts'msturtsuk KoMoon
Hong Kong
Tel: (852) 2r37-UM)
Fax (852) 273647960
Fax 81-M3.299-2408
Mama dos: not assume any vupmxbllilymv um oi any crcmry mum no drcu'l pan imsnaoirmliod and Nation two: the ngn at my MI w9htut nomcnto mange um drum, am wiwims
:1 [3501;].30 003953“! RIN D
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Datasheets for electronic components.
National Semiconductor was acquired by Texas Instruments.
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This file is the datasheet for the following electronic components:
NDP606B - product/ndp606b?HQS=TI-nu|I-nu|I-dscatalog-df-pf-nulI-wwe
NDP606A - product/ndp606a?HQS=T|-nu|I-nulI-dscatalog-df-pf—nulI-wwe
NDP605B - product/ndp605b?HQS=TI-nu|I—nu|I-dscatalog-df—pf—nulI-wwe
NDP605A - product/ndp605a?HQS=TI—nu|I—nu|I-dscatalog-df-pf—nulI-wwe
