NDP6020 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionLogic Level Enhancement Mode Field Effect Transistor / NDB6020 NDP6020 (TCV µ A ..
NDP6020P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CI ASI AV V I VV t FFAI°Rθ°RθNote:<
NDP6020P. ,P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description Enhancement Mode Field Effect Transistor / NDB6020P NDP6020P September (T = 2 ..
NDP6030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description N-Channel Logic Level Enhancement Mode Field Effect Transistor NDP6030L / NDB60 ..
NDP603AL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power25A, 30V. R = 0.022Ω @ V =10V.DS(ON) GSf ..
NDP6051 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
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NDP6020
N-Channel Logic Level Enhancement Mode Field Effect Transistor
November 1996 N-Channel Features A, 20 V. R = 0.023 W @ V= 4.5 V ) field effect transistors are produced using National's R = 0.028 W @ V= 2.7 V. ) proprietary, high cell density, DMOS technology. This Critical DC electrical parameters specified at elevated very high density process has been especially tailored temperature. to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 175°C maximum junction temperature rating. applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered High density cell design . circuits where fast switching, low in-line power loss, 2 PAK) package for both through and resistance to transients are needed. hole and surface mount applications. D G S TC VV VV
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