NDP4060 ,N-Channel Enhancement Mode Field Effect Transistorapplications. _____________________________________________________________________________________ ..
NDP4060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP4060L ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications.________________________________________________________________________________ DGSAb ..
NDP4060L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP408A ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Type Min T ..
NDP5060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
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NDP4060
N-Channel Enhancement Mode Field Effect Transistor
July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 15A, 60V. R = 0.10W @ V =10V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process has temperature. been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need pulses in the avalanche and commutation modes. These for an external Zener diode transient suppressor. devices are particularly suited for low voltage applications such 175°C maximum junction temperature rating. as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line High density cell design for extremely low R . DS(ON) power loss, and resistance to transients are needed. 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ___________________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unles otherwise noted C Symbol Parameter NDP4060 NDB4060 Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1 MW) DGR GS V Gate-Source Voltage - Continuous ± 20 V GSS - Nonrepetitive (t < 50 µs) ± 40 P I Drain Current - Continuous ± 15 A D - Pulsed ± 45 P Total Power Dissipation 50 W D Derate above 25°C 0.33 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds NDP4060 Rev. C © 1997
