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NDH8501N
Dual N-Channel Enhancement Mode Field Effect Transistor
September 1996
PRELIM INARY
NDH8501N
Dual N-Channel Enhancement M ode Field Effect Transistor
General Description Features_________________________________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter NDH8501N UnitsVDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 VD Drain Current - C ontinuous (Note 1) 2.8 A
- P ulsed 10D Maximum Power Dissipation (Note 1 ) 0.8 WJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERM AL CHARACTERISTICSθJA Thermal R esistance, Junction-to-Ambient (Note 1) 156 °C/WθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
SuperSOTTM-8 N-Channel enhancement mode
power field effect transistors are produced using
National's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount
package.
2.8 A, 30 V. R DS(ON) = 0.07 Ω @ VGS = 10 V
R DS(ON) = 0.1Ω @ VGS = 4.5 V.
Proprietary SuperSOTTM -8 package design using
copper lead frame for superior thermal and
electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC
current capability.
