NDH834P ,P-Channel Enhancement Mode Field Effect Transistorapplications such asExceptional on-resistance and maximum DC currentbattery powered circuits or por ..
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NDH834P
P-Channel Enhancement Mode Field Effect Transistor
May 1997 NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description Features TM -5.6 A, -20 V. R = 0.035 W @ V = -4.5 V SuperSOT -8 P-Channel enhancement mode power field DS(ON) GS R = 0.045 W @ V = -2.7V. effect transistors are produced using Fairchild's proprietary, DS(ON) GS TM high cell density, DMOS technology. This very high density Proprietary SuperSOT -8 package design using copper process is especially tailored to minimize on-state resistance lead frame for superior thermal and electrical capabilities. and provide superior switching performance. These devices High density cell design for extremely low R . DS(ON) are particularly suited for low voltage applications such as Exceptional on-resistance and maximum DC current battery powered circuits or portable electronics where fast capability. switching, low in-line power loss, and resistance to transients are needed. ____________________________________________________________________________________________ 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDH834P Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current - Continuous (Note 1a) -5.6 A D - Pulsed -15 Maximum Power Dissipation (Note 1a) 1.8 W P D (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Temperature Range -55 to 150 °C T ,T J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W qJC © 1997 NDH834P Rev.C
