NDH832P ,P-Channel Enhancement Mode Field Effect TransistorFeaturesThese P-Channel enhancement mode power field effect -4.2A, -20V. R = 0.06Ω @ V = -4.5V ..
NDH833N ,N-Channel Enhancement Mode Field Effect Transistor
NDH833N ,N-Channel Enhancement Mode Field Effect Transistor
NDH834P ,P-Channel Enhancement Mode Field Effect Transistorapplications such asExceptional on-resistance and maximum DC currentbattery powered circuits or por ..
NDH834P ,P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDH834P ,P-Channel Enhancement Mode Field Effect Transistor
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NJT4031NT3G ,NPN SOT223 40V/3A Low VCE(sat) Power TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max Uni ..
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NDH832P
P-Channel Enhancement Mode Field Effect Transistor
June 1996 NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4.2A, -20V. R = 0.06W @ V = -4.5V DS(ON) GS R = 0.08W @ V = -2.7V. transistors are produced using Fairchild's proprietary, high cell DS(ON) GS density, DMOS technology. This very high density process is High density cell design for extremely low R DS(ON). especially tailored to minimize on-state resistance and provide TM Enhanced SuperSOT -8 small outline surface mount superior switching performance. These devices are particularly package with high power and current handling capability. suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ___________________________________________________________________________________________ 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDH832P Units Drain-Source Voltage -20 V V DSS V Gate-Source Voltage -8 V GSS I Drain Current - Continuous (Note 1a) -4.2 A D - Pulsed -15 P Maximum Power Dissipation (Note 1a) 1.8 W D (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W R JC q NDH832P Rev. B2
