NDH831N ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions M in Typ M ..
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NDH831N
N-Channel Enhancement Mode Field Effect Transistor
May 1996
PRELIMINARY
NDH831N
N-Channel Enhancement M ode Field Effect Transistor
General Description Features_______________________________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter NDH831N UnitsDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage 8 VD Drain Current - Continuous (Note 1a) 5.6 A
- Pulsed 20 Maximum Power Dissipation (Note 1a) 1.8 W
(Note 1b) 1
(Note 1c) 0.9
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICSθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/WθJC Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W
These N-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide superior
switching performance. These devices are
particularly suited for low voltage applications such
as battery powered circuits and portable electronics
where fast switching, low in-line power loss, and
resistance to transients are needed.
5.6A, 20V. RDS(ON) = 0.035Ω @ VGS = 4.5V
R DS(ON) = 0.045Ω @ VGS = 2.7V.
High density cell design for extremely low RDS(ON).
Enhanced SuperSOTTM -8 small outline surface
mount package with high power and current
handling capability.
SuperSOTTM-8
