NDH8304 ,Dual P-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDH8304P ,Dual P-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDH8304P ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDH831N ,N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions M in Typ M ..
NDH8320C , Dual N & P-Channel Enhancement Mode Field EffectTransistor [Not recommended for new designs]General DescriptionN & P-Channel Enhancement Mode Field Effect TransistorDual 8320NDH December ..
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NDH8304
Dual P-Channel Enhancement Mode Field Effect Transistor
May 1997 NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features TM -2.7 A, -20 V. R = 0.07 W @ V = -4.5 V SuperSOT -8 P-Channel enhancement mode power field DS(ON) GS effect transistors are produced using Fairchild's proprietary, R = 0.095 W @ V = -2.7 V. DS(ON) GS high cell density, DMOS technology. This very high density TM Proprietary SuperSOT -8 package design using copper process is especially tailored to minimize on-state resistance. lead frame for superior thermal and electrical capabilities. These devices are particularly suited for low voltage applications such as notebook computer power management High density cell design for extremely low R . DS(ON) and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small Exceptional on-resistance and maximum DC current outline surface mount package. capability. ___________________________________________________________________________________________ 4 5 6 3 2 7 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDH8304P Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage ±8 V GSS I Drain Current - Continuous (Note 1) -2.7 A D - Pulsed -10 P Maximum Power Dissipation (Note 1) 0.8 W D T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC © 1997 NDH8304P Rev.C
