NDF11N50Z ,Power MOSFET 500V 0.52 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF11N50ZG , N-Channel Power MOSFET 500 V, 0.52 Ohm
NDF11N50ZH , N-Channel Power MOSFET 500 V, 0.52 Ohm
NDH8301N ,Dual N-Channel Enhancement Mode Field Effect Transistor
NDH8302P ,P-Channel Enhancement Mode Field Effect Transistorsapplications suchas notebook computer power management and High density cell design for extremely l ..
NDH8303N , Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NJSW036AT , TYPE WHITE LED
NJSW072T , TYPE WHITE LED
NDF11N50Z
Power MOSFET 500V 0.52 Ohm Single N-Channel
NDF11N50Z
N-Channel Power MOSFET
500 V , 0.52
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDF Unit
DrainïtoïSource Voltage VDSS 500 V
Continuous Drain Current, RJC (Note 1) ID 12 A
Continuous Drain Current
TA = 100°C, RJC (Note 1) 7.4 A
Pulsed Drain Current,
tP = 10 s
IDM 44 A
Power Dissipation, RJC PD 39 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche
Energy, ID = 10 A
EAS 420 mJ
ESD (HBM) (JESD22ïA114) Vesd 4000 V
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%,
TA = 25°C) (Figure 14)
VISO 4500 V
Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns
Continuous Source Current (Body
Diode) 12 A
Maximum Temperature for
Soldering Leads 260 °C
Operating Junction and
Storage T emperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperatureId 10.5 A, di/dt 200 A/s, VDD BVDSS, TJ 150°C.
NïChannel
MARKING
DIAGRAM = Location Code = Year = Work Week
G, H = PbïFree, HalogenïFree Package
http://
VDSS RDS(ON) (MAX) @ 4.5 A
500 V 0.52
NDF11N50ZG
NDF11N50ZH
AYWW
Gate Source
Drain
NDF11N50ZG
TOï220FP
CASE 221D
NDF11N50ZH
TOï220FP
CASE 221AH
G (1)
D (2)
S (3)
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
