NDF08N50Z ,Power MOSFET 500V 0.850 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF08N50ZG , N-Channel Power MOSFET 500 V, 0.69
NDF08N60Z ,Power MOSFET 600V 0.95 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF08N60ZG , N-Channel Power MOSFET 600 V, 0.95 Ω
NDF10N60Z ,Power MOSFET, N-Channel, 600 V, 0.75 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF10N60ZH , N-Channel Power MOSFET 600 V, 0.75 Ohm
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NJSW036AT , TYPE WHITE LED
NDF08N50Z
Power MOSFET 500V 0.850 Ohm Single N-Channel
NDF08N50Z
N-Channel Power MOSFET
500 V , 0.85
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDF08N50Z Unit
DrainïtoïSource Voltage VDSS 500 V
Continuous Drain Current RJC (Note 1) ID 8.5 A
Continuous Drain Current RJC
TA = 100°C (Note 1) 5.4 A
Pulsed Drain Current,
VGS @ 10 V
IDM 34 A
Power Dissipation PD 35 W
GateïtoïSource Voltage VGS 30 V
Single Pulse Avalanche Energy, ID =
7.5 A
EAS 190 mJ
ESD (HBM)
(JESD 22ïA114)
Vesd 3500 V
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%,
TA = 25°C) (Figure 14)
VISO 4500 V
Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns
MOSFET dV/dt dV/dt 60 V/ns
Continuous Source Current (Body
Diode) 7.5 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature ISD = 7.5 A, di/dt 100 A/s, VDD BVDSS, TJ = +150°C
Device Package Shipping
ORDERING INFORMATION
NDF08N50ZH TOï220FP
(PbïFree,
50 Units / Rail
NïChannel
MARKING
DIAGRAM = Location Code = Year = Work Week
G, H = PbïFree, HalogenïFree Package
http://
VDSS RDS(ON) (MAX) @ 3.6 A
500 V 0.85
NDF08N50ZG
NDF08N50ZH
AYWW
Gate Source
Drain
NDF08N50ZG
TOï220FP
CASE 221D
NDF08N50ZG TOï220FP
(PbïFree,
HalogenïFree)
50 Units / Rail
NDF08N50ZH
TOï220FP
CASE 221AH
G (1)
D (2)
S (3)
