NDF06N60Z ,Power MOSFET, N-Channel, 600 V, 1.2 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF06N60ZG , NDP06N60Z
NDF06N62Z ,Power MOSFET 620V 1.2 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF06N62ZG , N-Channel Power MOSFET 620 V, 0.98 ,
NDF08N50Z ,Power MOSFET 500V 0.850 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF08N50ZG , N-Channel Power MOSFET 500 V, 0.69
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NJSW036AT , TYPE WHITE LED
NDF06N60Z
Power MOSFET, N-Channel, 600 V, 1.2 Ω
NDF06N60Z
N-Channel Power MOSFET
600 V , 1.2
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
DrainïtoïSource Voltage VDSS 600 V
Continuous Drain Current, RJC (Note 1) ID 7.1 A
Continuous Drain Current
TA = 100°C, RJC (Note 1) 4.5 A
Pulsed Drain Current,
VGS @ 10 V
IDM 28 A
Power Dissipation, RJC PD 35 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche Energy, L = 6.3 mH,
ID = 6.0 A
EAS 113 mJ
ESD (HBM) (JESD22ïA114) Vesd 3000 V
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%,
TA = 25°C) (Figure 13)
VISO 4500 V
Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns
Continuous Source Current (Body Diode) IS 6.0 A
Maximum Temperature for Soldering Leads TL 260 °C
Operating Junction and
Storage T emperature Range
TJ, Tstg ï55 to
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature ISD = 6.0 A, di/dt 100 A/s, VDD BVDSS, TJ = +150°C
NïChannel
http://
VDSS (@ TJmax) RDS(ON) (MAX) @ 3 A
650 V 1.2
G (1)
D (2)
S (3)
NDF06N60ZG
TOï220FP
CASE 221D
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
ORDERING AND MARKING INFORMATION23
NDF06N60ZH
TOï220FP
CASE 221AH23
