NDF0610 ,P-Channel Enhancement Mode Field Effect Transistorapplicationsrequiring a low current high side switch.________________ SGD Absolute M aximum Ratings ..
NDF06N60Z ,Power MOSFET, N-Channel, 600 V, 1.2 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF06N60ZG , NDP06N60Z
NDF06N62Z ,Power MOSFET 620V 1.2 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF06N62ZG , N-Channel Power MOSFET 620 V, 0.98 ,
NDF08N50Z ,Power MOSFET 500V 0.850 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NJSW036AT , TYPE WHITE LED
NDF0610-NDS0610
P-Channel Enhancement Mode Field Effect Transistor
April 1995
NDF0610 / NDS0610
P-Channel Enhancement M ode Field Effect Transistor
General Description Features________________________________________________________________________________________________
Absolute M aximum RatingsTA = 25°C unless otherwise noted
Symbol Parameter NDF0610 NDS0610 UnitsVDSS Drain-Source Voltage -60 VDGR Drain-Gate Voltage (R
GS < 1 MΩ) -60 V
VGSS Gate-Source Voltage - Continuous ±20 V
- Nonrepetitive (tP < 50 μs) ±30 VD Drain C urrent - Continuous -0.18 -0.12 A
- Pulsed -1D Maximum Power Dissipation TA = 25°C 0.8 0.36 W
Derate above 25°C 5 2.9 mW/oC
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °CL Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
300 °C
THERMAL CHARACTERISTICSθJA Thermal Resistance, Junction-to-Ambient 200 350 °C/W
These P-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process has been designed
to minimize on-state resistance, provide rugged and
reliable performance and fast switching. They can
be used, with a minimum of effort, in most
applications requiring up to 0.18A DC and can
deliver pulsed currents up to 1A. This product is
particularly suited to low voltage applications
requiring a low current high side switch.
-0.18 and -0.12A, -60V. R DS(ON) = 10Ω
Voltage controlled p-channel small signal switch
High density cell design for low R DS(ON)
TO-92 and SOT-23 packages for both through
hole and surface mount applications
High saturation current
