NDF05N50Z ,Power MOSFET 500V 1.5 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions ..
NDF05N50ZG , N-Channel Power MOSFET 500 V, 1.5 Ohm
NDF05N50ZH , N-Channel Power MOSFET 500 V, 1.5 Ohm
NDF0610 ,P-Channel Enhancement Mode Field Effect Transistorapplicationsrequiring a low current high side switch.________________ SGD Absolute M aximum Ratings ..
NDF06N60Z ,Power MOSFET, N-Channel, 600 V, 1.2 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF06N60ZG , NDP06N60Z
NJM79M05A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NDF05N50Z
Power MOSFET 500V 1.5 Ohm Single N-Channel
NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V , 1.5
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested 100% Rg Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDF NDD Unit
DrainïtoïSource Voltage VDSS 500 V
Continuous Drain Current RJC ID 5.5
(Note 1)
4.7 A
Continuous Drain Current
RJC, TA = 100°C 3.5
(Note 1) A
Pulsed Drain Current, VGS @ 10 V IDM 20 19 A
Power Dissipation RJC PD 30 83 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche Energy, ID =
5.0 A
EAS 130 mJ
ESD (HBM) (JESD22ïA114) Vesd 3000 V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. 30%, TA = 25°C) (Figure 17)
VISO 4500 V
Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns
MOSFET dV/dt dV/dt 60 V/ns
Continuous Source Current
(Body Diode) 5 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature IS = 4.4 A, di/dt 100 A/s, VDD BVDSS, TJ = +150°C
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VDSS RDS(on) (MAX) @ 2.2 A
500 V 1.5
NïChannel
G (1)
D (2)
S (3)
NDF05N50ZG
TOï220FP
CASE 221D
NDD05N50ZT4G
DPAK
CASE 369AA2
NDD05N50Zï1G
IPAK
CASE 369D23
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
ORDERING AND MARKING INFORMATION2323
NDF05N50ZH
TOï220FP
CASE 221AH
