NDF04N62Z ,Power MOSFET 620V 2 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF04N62ZG , N-Channel Power MOSFET 620 V, 1.8
NDF05N50Z ,Power MOSFET 500V 1.5 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions ..
NDF05N50ZG , N-Channel Power MOSFET 500 V, 1.5 Ohm
NDF05N50ZH , N-Channel Power MOSFET 500 V, 1.5 Ohm
NDF0610 ,P-Channel Enhancement Mode Field Effect Transistorapplicationsrequiring a low current high side switch.________________ SGD Absolute M aximum Ratings ..
NJM79L24UA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M05A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NDF04N62Z
Power MOSFET 620V 2 Ohm Single N-Channel
NDF04N62Z, NDD04N62Z
N-Channel Power MOSFET
620 V , 2.0 �
Features Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq[2 oz] including traces).2. Limited by maximum junction temperature3. ISD = 4.0 A, di/dt ≤ 100 A/�s, VDD ≤ BVDSS, TJ = +150°C
This document contains information on some products that are still under development.
