NDF04N60Z ,Power MOSFET, N-Channel, 600 V, 2.0 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF04N60ZG , N-Channel Power MOSFET 1.8 , 600 Volts
NDF04N60ZH , N-Channel Power MOSFET 600 V, 2.0 Ohm
NDF04N62Z ,Power MOSFET 620V 2 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF04N62ZG , N-Channel Power MOSFET 620 V, 1.8
NDF05N50Z ,Power MOSFET 500V 1.5 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions ..
NJM79L24UA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M05A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NDF04N60Z
Power MOSFET, N-Channel, 600 V, 2.0 Ω
NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V , 2.0
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter Symbol NDF NDD Unit
DrainïtoïSource Voltage VDSS 600 V
Continuous Drain Current RJC(Note1) ID 4.8 4.1 A
Continuous Drain Current RJC, TA =
100°C (Note1) 3.0 2.6 A
Pulsed Drain Current,
VGS @ 10V
IDM 20 20 A
Power Dissipation RJC PD 30 83 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche Energy, ID = 4.0
EAS 120 mJ
ESD (HBM) (JESD22ïA114) Vesd 3000 V
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%, TA = 25°C)
(Figure 15)
VISO 4500 ï V
Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns
MOSFET dV/dt dV/dt 60 V/ns
Continuous Source Current
(Body Diode) 4.0 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage T emperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature ISD = 4.0 A, di/dt 100 A/s, VDD BVDSS, TJ = +150°C
http://
VDSS (@ TJmax) RDS(on) (MAX) @ 2 A
650 V 2.0
NDF04N60ZG
TOï220FP
CASE 221D
NDD04N60ZT4G
DPAK
CASE 369AA2
NDD04N60Zï1G
IPAK
CASE 369D23
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
ORDERING AND MARKING INFORMATION23
NïChannel
G (1)
D (2)
S (3)23
NDF04N60ZH
TOï220FP
CASE 221AH
