NDF03N60Z ,Power MOSFET 600V 3.6 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF03N60ZG , N-Channel Power MOSFET 600 V, 3.3
NDF04N60Z ,Power MOSFET, N-Channel, 600 V, 2.0 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF04N60ZG , N-Channel Power MOSFET 1.8 , 600 Volts
NDF04N60ZH , N-Channel Power MOSFET 600 V, 2.0 Ohm
NDF04N62Z ,Power MOSFET 620V 2 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
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NJM79M05A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NDF03N60Z
Power MOSFET 600V 3.6 Ohm Single N-Channel
NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V , 3.6
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDF NDD Unit
DrainïtoïSource Voltage VDSS 600 V
Continuous Drain Current RJC ID 3.1
(Note 1)
2.6 A
Continuous Drain Current RJC
TA = 100°C 2.9
(Note 1)
1.65 A
Pulsed Drain Current, VGS @ 10 V IDM 12 10 A
Power Dissipation RJC PD 27 61 W
GateïtoïSource Voltage VGS 30 V
Single Pulse Avalanche Energy,
ID = 3.0 A
EAS 100 mJ
ESD (HBM) (JESD 22ïA114) Vesd 3000 V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. 30%, TA = 25°C) (Figure 17)
VISO 4500 V
Peak Diode Recovery dv/dt 4.5 (Note 2) V/ns
Continuous Source Current (Body
Diode) 3.0 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature ISD = 3.0 A, di/dt 100 A/s, VDD BVDSS, TJ = +150°C
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MARKING AND ORDERING INFORMATION
VDSS RDS(on) (MAX) @ 1.2 A
600 V 3.6
NDF03N60ZG
TOï220FP
CASE 221D
NDD03N60ZT4G
DPAK
CASE 369AA2
NDD03N60Zï1G
IPAK
CASE 369D2323
NïChannel
G (1)
D (2)
S (3)
NDF03N60ZH
TOï220FP
CASE 221AH23
