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NDD04N50ZONN/a10000avaiPower MOSFET 500V 2.7 Ohm Single N-Channel


NDD04N50Z ,Power MOSFET 500V 2.7 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions ..
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NDD04N50Z
Power MOSFET 500V 2.7 Ohm Single N-Channel
NDD04N50Z
N-Channel Power MOSFET
500 V , 2.7 
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
DrainïtoïSource Voltage VDSS 500 V
Continuous Drain Current RJC ID 3.0 A
Continuous Drain Current
RJC, TA = 100°C 1.9 A
Pulsed Drain Current, VGS @ 10 V IDM 12 A
Power Dissipation RJC PD 61 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche Energy,
ID = 3.4 A
EAS 120 mJ
ESD (HBM) (JESD22ïA114) Vesd 2800 V
Peak Diode Recovery dv/dt 4.5 (Note 1) V/ns
Continuous Source Current
(Body Diode) 3.4 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.ID  3.4 A, di/dt  200 A/s, VDD  BVDSS, TJ  150°C.
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See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
MARKING AND ORDERING INFORMATION
VDSS RDS(on) (MAX) @ 1.5 A
500 V 2.7
DPAK
CASE 369AA
STYLE 22
IPAK
CASE 369D
STYLE 223
NïChannel
G (1)
D (2)
S (3)
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