NDD03N80Z ,Power MOSFET 800V 4.5 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions ..
NDD03N80ZT4G , N.Channel Power MOSFET
NDD04N50Z ,Power MOSFET 500V 2.7 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Conditions ..
NDD04N50Z-1G , N-Channel Power MOSFET 500 V, 2.7
NDD04N50ZT4G , N-Channel Power MOSFET 500 V, 2.7
NDD04N60Z , N-Channel Power MOSFET 1.8 , 600 Volts
NJM79L09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L12UA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L24UA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M05A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NDD03N80Z
Power MOSFET 800V 4.5 Ohm Single N-Channel
NDD03N80Z, NDF03N80Z
NChannel Power MOSFET
800 V, 4.5
Features ESD DiodeïProtected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDD NDF Unit
DrainïtoïSource Voltage VDSS 800 V
Continuous Drain Current RJC ID 2.9 3.3
(Note 1)
Continuous Drain Current
RJC, TA = 100°C 1.9 2.1
(Note 1)
Pulsed Drain Current, VGS @ 10 V IDM 12 13 A
Power Dissipation RJC PD 96 25 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche Energy, ID =
2.5 A
EAS 100 mJ
ESD (HBM) (JESD22ïA114) Vesd 2300 V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. 30%, TA = 25°C) (Figure 14)
VISO 4500 V
Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns
Continuous Source Current
(Body Diode) 3.3 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature IS = 3.3 A, di/dt 100 A/s, VDD BVDSS, TJ = +150°C
http://
See detailed ordering and shipping information in the package
dimensions section on page6 of this data sheet.
MARKING AND ORDERING INFORMATION
V(BR)DSS RDS(ON) MAX
800 V 4.5 @ 10 V
NDD03N80ZT4G
DPAK
CASE 369AA
NDD03N80Zï1G
IPAK
CASE 369D
N-Channel
G (1)
D (2)
S (3)
NDF03N80ZH
TOï220FP
CASE 221AH23232
