NDC652 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDC652P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorMarch 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC7001C ,Dual N & P-Channel Enhancement Mode Field Effect Transistorapplications. • High saturation current • High density cell design for low R DS(ON)TM• Proprietary ..
NDC7001C ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
NDC7002 ,Dual N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDC7002N_NL ,Dual N-Channel Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
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NDC652
P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -2.4A, -30V. R = 0.18W @ V = -4.5V DS(ON) GS field effect transistors are produced using Fairchild's R = 0.11W @ V = -10V. DS(ON) GS proprietary, high cell density, DMOS technology. This TM very high density process is especially tailored to Proprietary SuperSOT -6 package design using copper minimize on-state resistance. These devices are lead frame for superior thermal and electrical capabilities. particularly suited for low voltage applications such as High density cell design for extremely low R . DS(ON) notebook computer power management and other battery powered circuits where fast high-side switching, Exceptional on-resistance and maximum DC current and low in-line power loss are needed in a very small capability. outline surface mount package. ____________________________________________________________________________________________ 4 3 5 2 6 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDC652P Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage - Continuous -20 V GSS I Drain Current - Continuous -2.4 A D - Pulsed -10 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 1 (Note 1c) 0.8 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R qJA Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W R JC q © 1997 NDC652P Rev. D1
