NDB7060L , N-Channel Enhancement Mode Field Effect Transistor [Obsolete]Electrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDC631N ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable High density cell design for extremely low R .DS(ON)ph ..
NDC632P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. R = 0.14Ω @ V = -4.5V ..
NDC632P_NL ,P-Channel Logic Level Enhancement Mode Field TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDC651N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. R = 0.09Ω @ V = 4.5V ..
NDC652 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
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NJM79L06A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NDB7060L
N-Channel Enhancement Mode Field Effect Transistor [Obsolete]
June 1996 NDP7060L / NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field 75A, 60V. R = 0.015W @ V = 5V DS(ON) GS effect transistors are produced using Fairchild's proprietary, Low drive requirements allowing operation directly from logic high cell density, DMOS technology. This very high density drivers. V < 2.0V. GS(TH) process has been especially tailored to minimize on-state resistance, provide superior switching performance, and Critical DC electrical parameters specified at elevated withstand high energy pulses in the avalanche and temperature. commutation modes. These devices are particularly suited for Rugged internal source-drain diode can eliminate the need low voltage applications such as automotive, DC/DC for an external Zener diode transient suppressor. converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and 175°C maximum junction temperature rating. resistance to transients are needed. High density cell design for extremely low R . DS(ON) 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP7060L NDB7060L Units V Drain-Source Voltage 60 V DSS 60 V V Drain-Gate Voltage (R < 1 MW) DGR GS V Gate-Source Voltage - Continuous ± 20 V GSS ± 40 - Nonrepetitive (t < 50 µs) P I Drain Current - Continuous 75 A D - Pulsed 225 P Total Power Dissipation @ T = 25°C 150 W D C Derate above 25°C 1 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG © 1997 NDP7060L Rev. B2 / NDB7060L Rev. C
