NDB7052L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDB7060L , N-Channel Enhancement Mode Field Effect Transistor [Obsolete]Electrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDC631N ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable High density cell design for extremely low R .DS(ON)ph ..
NDC632P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. R = 0.14Ω @ V = -4.5V ..
NDC632P_NL ,P-Channel Logic Level Enhancement Mode Field TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDC651N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. R = 0.09Ω @ V = 4.5V ..
NJM78M56FA , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NJM7905FA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L03A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L03UA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L05UA , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79L06A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NDB7052L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
May 1997 NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field 75 A, 50 V. R = 0.010 W @ V = 5 V DS(ON) GS effect transistors are produced using Fairchild's proprietary, R = 0.0075 W @ V = 10 V. DS(ON) GS high cell density, DMOS technology. This very high density Low drive requirements allowing operation directly from logic process has been especially tailored to minimize on-state drivers. V < 2.0V. resistance, provide superior switching performance, and GS(TH) withstand high energy pulses in the avalanche and Rugged internal source-drain diode can eliminate the need commutation modes. These devices are particularly suited for for an external Zener diode transient suppressor. low voltage applications such as automotive, DC/DC 175°C maximum junction temperature rating. converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and High density cell design for extremely low R . DS(ON) resistance to transients are needed. 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP7052L NDB7052L Units V Drain-Source Voltage 50 V DSS V 50 V DGR Drain-Gate Voltage (R < 1 MW) GS Gate-Source Voltage - Continuous ±16 V V GSS - Nonrepetitive (t < 50 µs) ±25 P I Drain Current - Continuous 75 A D - Pulsed 225 P Maximum Power Dissipation @ T = 25°C 150 W D C Derate above 25°C 1 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 1 °C/W JC q Thermal Resistance, Junction-to-Ambient 62.5 °C/W R qJA © 1997 NDP7052L Rev.B1
