NDB7051 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDB7052L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDB7060L , N-Channel Enhancement Mode Field Effect Transistor [Obsolete]Electrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDC631N ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable High density cell design for extremely low R .DS(ON)ph ..
NDC632P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. R = 0.14Ω @ V = -4.5V ..
NDC632P_NL ,P-Channel Logic Level Enhancement Mode Field TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
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NDB7051
N-Channel Enhancement Mode Field Effect Transistor
August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 70A, 50V. R = 0.013W @ V =10V. DS(ON) GS transistors are produced using Fairchild's proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process is temperature. especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need pulses in the avalanche and commutation modes. These for an external Zener diode transient suppressor. devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and 175°C maximum junction temperature rating. other battery powered circuits where fast switching, low in-line High density cell design for extremely low R . DS(ON) power loss, and resistance to transients are needed. 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP7051 NDB7051 Units V Drain-Source Voltage 50 V DSS V 50 V DGR Drain-Gate Voltage (R < 1 MW) GS V Gate-Source Voltage - Continuous ± 20 V GSS - Nonrepetitive (t < 50 µs) ± 40 P I Drain Current - Continuous 70 A D - Pulsed 210 P Maximum Power Dissipation @ T = 25°C 130 W D C Derate above 25°C 0.87 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds © 1997 NDP7051 Rev. D
