NDB603AL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power25A, 30V. R = 0.022Ω @ V =10V.DS(ON) GSf ..
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NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 25A, 30V. R = 0.022W @ V =10V. DS(ON) GS field effect transistors are produced using Fairchild's Critical DC electrical parameters specified at elevated proprietary, high cell density, DMOS technology. This temperature. very high density process is especially tailored to minimize on-state resistance. These devices are Rugged internal source-drain diode can eliminate the need particularly suited for low voltage applications such as for an external Zener diode transient suppressor. DC/DC converters and high efficiency switching circuits High density cell design for extremely low R . where fast switching, low in-line power loss, and DS(ON) resistance to transients are needed. 175°C maximum junction temperature rating. ______________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP603AL NDB603AL Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous ± 20 V GSS I Drain Current - Continuous 25 (Note 1) A D - Pulsed 100 P Total Power Dissipation @ T = 25°C 50 W D C Derate above 25°C 0.4 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG Maximum lead temperature for soldering purposes, 275 °C T L 1/8" from case for 5 seconds THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case 2.5 °C/W R qJC Thermal Resistance, Junction-to-Ambient 62.5 °C/W R JA q © 1997 NDP603AL.SAM
